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Reactive ion etching: STS 320 PC

Specifications

Reactive ion etching: STS 320 PC

This is a fully automatic computer controlled reactive ion etching system with end point detection system. The system includes:

Specifications

Reactive ion etching: STS 320 PC

This is a fully automatic computer controlled reactive ion etching system with end point detection system. The system includes:

  • Cathode diameter: 30 cm.
  • Cathode area: 706.5 cm2.
  • RF forward power range: 10 to 600 watts.
  • Chamber max pressure: 500 mTorr.
  • Substrate sizes: 2 to 8 inch and small fragments.
  • Process gases are SF6, CHF3, C3F8, He, CF4, O2, and N2.