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Plasma enhanced chemical vapor deposition: STS PECVD

Specifications

Plasma enhanced chemical vapor deposition: STS PECVD

This instrument includes:

Specifications

Plasma enhanced chemical vapor deposition: STS PECVD

This instrument includes:

  • Automatic computer-controlled plasma enhanced chemical vapor deposition chamber.
  • High and low frequency power supply (HF, 13.56 MHz, LF, 380 kHz) is optional.
  • Temperature controlled sample stage up to 300°C – Single wafer loadlock up to 6″” wafer.
  • Process gases are SiH4, NH3, CF4, O2, N2O, H2 and N2.